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| 2010-12-03 |
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| ST launch vehicle lower power FET MOS transistor resistance
STMicroelectronics has introduced a new automotive market for high-current power MOS field effect transistors, which uses the latest optimization of ST's STripFET? Patented technology, to achieve the lowest on-resistance. New STD95N04 is a 40V standard level DPAK products, the largest on-resistance RDS (on) 6.5 milliohms. This product is designed for 80A DC-DC converters, motor control, solenoid valve drive and ABS design. Channel and using conventional technology to produce products, the new products, price and resistance in the highly competitive performance. Typical new product RDS (on) range of 5 cents Europe can meet the standard threshold voltage drive requirements. Automotive electrical components comply with the Council STD95N04 Technical Committee of components for the automotive environment, the development of AEC Q101 Stress Test standard discrete devices. Maximum operating temperature of the component 175 ℃, 100% by the avalanche test. ST STripFET new technology to greatly improve the cell density, based on resistance and lower power consumption than previous generation technology, occupies less silicon area. Being developed by other MOS power field effect transistors will use the same technology to meet the needs of DPAK and D2PAK.
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